Comparison of the freeze-out in Indium and B doper n MOSFETs in the temperature range 4.2

Comparison of the freeze-out in Indium and B doper n MOSFETs in the temperature range 4.2—300 K

Authors:

1. I. Alawneh, E. Simoen, S. Biesemenms, K. De Meyer and C. Claeys

Conference:

European workshop on low temperature Electronics, WOLT 3

Location:

San Miniato, Tuscany Italy

Date:

الاثنين, يونيو 1, 1998

Comparison of the freeze-out in Indium and B doper n MOSFETs in the temperature range 4.2—300 K