Impact of Yb, In, Ag and Au thin film substrates on the crystalline nature, Schottky barrier formation and microwave trapping properties of Bi2O3 films

The effect of the Yb, In, Ag and Au thin film metal substrates on the structural and electrical properties of Bi2O3 thin films are investigated by means of X-ray diffraction, impedance spectroscopy an current-voltage characteristic techniques. The Bi2O3 films are observed to exhibit a crystallization nature depending on the crystal structure of the substrate. Particularly, when the metal substrate is facing centered cubic, the Bi2O3 prefers the gamma-phase of body centered cubic crystallization for the (Yb, Ag and Au)/Bi2O3 interfaces. Whereas when a tetragonal substrate (indium) is used, the tetragonal beta-Bi2O3 single phase is preferred. All structural parameters presented by the lattice constant, degree of orientation, dislocation density, micro-strain and grain size are observed to strongly depend on the crystal type. In addition, the evaluation of the Schottky barrier formation at the (Yb, In, Ag, Au)/Bi2O3/Au interfaces by the current-voltage characteristics, revealed that the (In, Au)/Bi2O3/Au interface exhibit ohmic nature of contact and the (Yb,Ag)/Bi2O3/Au are of Schottky type, the rectification ratio for the Yb/Bi2O3/Au interface reaches a value of 10(5) indicating the applicability of these interfaces in CMOS digital logic devices. Moreover, the impedance spectroscopy analysis revealed that the ohmic interfaces exhibit a negative capacitance effect. The In/beta-Bi2O3/Au and Yb/.-Bi2O3/Au interfaces are performing as microwave traps with wave absorption percentage of 62% and 92% at frequencies of 193 and 1200 MHz, respectively. The features of the devices are promising as they indicate the applicability as microwave resonator and fast electronic switches.