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Journal Name:
Plasmonics, Springer
Volume:
11
Issue:
47
Pages From:
515
To:
521
Date:
السبت, أبريل 1, 2017
Keywords:
Plasmon . InSe .Wave trap .Terahertz . Gigahertz
Project:
Funded by the Deanship of Scientific Research (DSR), at King Abdulaziz University, Jaddah, under the grant number G-150-363-1436 & funded partially by SRC-AAUJ.
Abstract:
In this article, we investigate the plasmon-dielectric
spectral interaction in the Ag/InSe and Al/InSe thin-film interfaces.
The mechanism is explored by means of optical absorbance
and reflectance at terahertz frequencies and by the impedance
spectroscopy at gigahertz frequencies. It was observed
that the interfacing of the InSe with Ag and Al metals
with a film thickness of 250 nm causes an energy band gap
shift that suits the production of thin-film optoelectronic devices.
The reflectance and dielectric constant and optical conductivity
spectral analysis of these devices displayed the properties
of wireless band stop filters at 390 THz. The physical
parameters which are computed from the conductivity spectra
revealed higher mobility of charge carriers at the Al/InSe interface
over that of Ag/InSe. The respective electron-bounded
plasmon frequencies are found to be 2.61 and 2.13 GHz. On
the other hand, the impedance spectral analysis displayed a
microwave resonator feature with series resonance peak position
at 1.68 GHz for the Al/InSe/Ag interface. In addition, the
temperature-dependent impedance spectra, which were recorded
in the temperature range of 300–420 K, revealed no
significant effect of temperature on the wave trapping properties
of the Al/InSe/Ag interface. The sensitivity of the interfaces
to terahertz and gigahertz frequencies nominates it as
laser light/microwave traps, which are used in fibers and
communications.
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